smd type 2SA1729 features adoption of fbet, mbit process. large current capacity. low collector-to-emitter saturation voltage. high-speed switching. small-sized package. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current i c -1.5 a collector current (pulse) i cp -3 a collector dissipation p c *1.3 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = -40v , i e =0 -1 a emitter cut-off current i ebo v eb =-3v,i c =0 -1 a v ce =-2v,i c = -100ma 70 280 v ce =-2v,i c = -1.5a 25 collector-emitter saturation voltage v ce(sat) i c = -800ma , i b = -40ma -0.3 -0.8 v base-emitter saturation voltage v be(sat) i c = -800ma , i b = -40ma -0.9 -1.3 v collector-base breakdown voltage v (br)cbo i c = -10a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -40 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v gain-bandwidth product f t v ce =-2v,i c = -100ma 300 mhz output capacitance c ob v cb = -10v , f = 1mhz 18 pf turn-on time t on 50 100 ns storage time t stg 120 220 ns turn-off time t off 150 300 ns dc current gain h fe see test circuit smd type product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
smd type electrical characteristics curves h fe classification marking rank q r s h fe 70 140 100 200 140 280 ag test circuit 2SA1729 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
smd type 2SA1729 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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